Guerrero Laos, Alvaro Javier

Profile Picture

Filters

20211
Reset filters

Settings

Citations

Publication Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Publication
    Characterization of planar sensors bonded to RD53A readout chip for CMS phase 2 inner tracker system
    (2021-06) Guerrero Laos, Alvaro Javier; Malik, Sudhir; College of Arts and Sciences - Sciences; Marrero Soto, Pablo J.; Santana Colón, Samuel; Department of Physics; Colón Reyes, Omar
    The HL-LHC conditions of instantaneous peak luminosities up to 7.5x10E34 cmE2 sE-1 and an integrated luminosity of the order of 300 fE-1/year would result in 1 MeV neutron equivalent fluence of 2.3x10E16 n_eq/cmE2 and a total ionizing dose (TID) of 12 MGy (1.2 Grad) close to the center of the CMS detector, where the Phase-2 Silicon Pixel Tracker will be installed during the long-shutdown between 2024-2026. The detector should survive the above radiation dose, handle the projected hit rates of 3 GHz/cmE2 at lowest radius, be able to separate and identify particles in extremely dense collision debris, deal with a pileup of 140-200 collisions per bunch crossing and have high spatial resolution. This translates into requiring a higher granular detector design, composed by thinner and smaller pixel sensors with higher radiation tolerance. The present work describes the characterization of four planar pixel sensors where one of them was submitted to radiation exposure of 1.3x10E16 n_eq/cmE2. They were bonded to RD53A readout chip. The pixel sizes are 50x50 square microns and 25x100 square microns pitch, with 150 micron thick. These sensors were tested at Fermilab Test Beam Facilities (FTBF) using a 120 GeV proton beam and a telescope of about 5 microns resolution to reconstruct the particle tracks. Monicelli and Chewie programs were used to get the hit efficiency, spatial resolution, cluster size and charge collection efficiency. Unirradiated sensors showed high hit efficiency and good resolution under conditions such as 15 C temperature and 80 V bias voltage. We saw that the radiation affects the hit eciency, however, it can be compensated by increasing the bias voltage. The resolution reached by irradiated sensor and size of 50 microns was approximately 12 microns using cluster size 2. In addition, its intrinsic spatial resolution was less than 10 microns. The resolution for all non-irradiated sensors was about 7 microns considering cluster size 2. The unirradiated sensors collected a expected 12000 electrons charge with a slight dependence of the rotation angle, in contrast, the radiation over a the sensor affected the collection efficiency because of the trapping. In general, the efficiency depends on the radiation stage and applied bias voltage. The rotation of the plane sensor with respect to the beam line helps to increase the resolution due to charge sharing between neighboring pixels at larger cluster sizes. The charge collection efficiency is proportional to bias voltage and rotation angle.