Contreras Ospino, Boris M.

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    Development of an analytical trapezoidal MOSFET model: Used in a methodology for gate enclosed MOS transistors design based on technology layout rules
    (2020-12-07) Contreras Ospino, Boris M.; Contreras Ospino, Boris M.; Ducoudray, Gladys O.; College of Engineering; Serrano, Guillermo; Sallese, Jean M.; Toledo Quiñones, Manuel; Palomera García, Rogelio; Department of Electrical and Computer Engineering; Cáceres Duque, Luis F.
    Gate enclosed or annular MOS transistors are one of the more successful solutions to improve the radiation resistance in an electronic circuit. There are many types of research and works regarding one of the main issues that come from using this type of device and its geometrical shape. Analytical or experimental methods reported different solutions to calculate the reciprocal aspect ratio of annular MOSFETs. Analytical approaches found in the literature use the drawn layout of the gate enclosed MOS transistor. Drawn shapes (rectangular or with broken corners) were deconstructed into smaller devices, such as trapezoid, squares, rectangles, or transformed using dedicated software. Analytical solutions give the designer the advantage of being able to simulate their designs before fabrication. On the post-fabrication stage, a comparison is made between the simulated electrical response of the calculated equivalent aspect ratio and the experimental measurements to ensure the accuracy of the analytical solutions. Transistor parameters such as width and length are among those a designer can modify. This thesis presents an analytical method using a trapezoidal shape for gate enclosed MOSFET width over length calculation. The analytical approach is a relevant part of the methodology for annular MOS transistors design based on technology layout rules, which gives designers a more familiar solution to integrate annular transistors in their circuits.