Castillo-Cisneros, Iván W.

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    Fabricación y caracterización de películas delgadas de sesquióxido de vanadio (V₂0₃) crecidas sobre sustratos de Si0₂ y Al₂0₃ para los cortes A, M, C y R.
    (2017) Castillo-Cisneros, Iván W.; Fernández, Félix E.; College of Arts and Sciences - Sciences; Marrero Soto, Pablo J.; Rúa De la Asunción, Armando; Department of Physics; Sundaram, Paul
    In this research thin films of vanadium sesquioxide (V₂0₃) were produced by the magnetron sputtering DC technique. The films were deposited on Si0₂ glass substrate and Al₂0₃ crystals in A, M, C and R cuts. The analysis of the crystalline structure was performed by X-ray diffraction in -2θ and azimuthal sweep configurations. It was found that on both substrate types V₂0₃ was crystallized at the growth conditions used. The samples grown on Al₂0₃ grew epitaxially with respect to the substrate, for all four cuts. Those grown on glass did not show strong crystal orientation. The electrical characterization was performed by measuring the resistivity vs. temperature in a range from 40 to 300 K. These characterization curves allowed identification of the metalinsulation phase change for the films grown on substrates of Si0₂ and Al₂0₃ for cuts A, M, C and R, with an increase of the resistivity below 150 K and 180 K by 2 and 4 orders of magnitude respectively. For both cases the transition temperature (????) depends on the thickness of the films. Such ???? is comparable with values reported by other authors. The study of the surface morphology was done by atomic force microscopy for samples grown on substrates of Al₂0₃ for cuts A and R. It was found that the roughness of the samples and the grain size is rather different in each of these two cases, one of which (A) corresponds to a fully epitaxial film while the other (R) corresponds to epitaxial growth with twins.