Rosas-Niño, Blanca Y.

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Estudio eléctrico y magnético de películas delgadas semiconductoras de CuAlO2 y CuAl1−xFexO2 con x=0.2
(2012) Rosas-Niño, Blanca Y.; Jiménez-González, Héctor J.; College of Arts and Science - Science; Fernández, Félix E.; Radovan, Henri A.; Department of Physics; Lorenzo-González, Edgardo
Semiconducting materials change their conductivity in the presence of impurities, lattice defects, an applied electric or magnetic field, or a temperature change. This work will show and explain the electric and magnetic behavior of two semiconducting thin films: CuAlO2 and CuAl1−xFexO2 with x=0.2 (20% doping with iron). For the electric study, the voltage as function of current (V-I) is measured at room temperature using the two-point and four-point probing techniques. In the case of CuAlO2 the I-V measurements show a quasi-linear and symmetric behavior. In the case of CuAl0.8Fe0.2O2 the I-V measurements show ohmic (linear) results. It was found that the two and four point techniques give the same behavior. Conductivity as a function of temperature between 125 K and room temperature, were also studied both samples. For the magnetic study, a magnetic field was applied perpendicularly to the thin films to determine if changes in the conductivity would take place. It was found that the magnetic field has no influence on the samples, in other words, there is no magneto-resistance for applied fields up to 4 teslas (T).