Aponte-Roa, Diego A.

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Characterization of aluminum nitride thin films for micro and nanomechanical resonators
(2008) Aponte-Roa, Diego A.; Sepulveda-Alancastro, Nelson; College of Engineering; Fernández, Félix E.; Rodríguez-Solís, Rafael A.; Department of Electrical and Computer Engineering; Padovani, Agnes M.
This work presents the setup of a Physical Vapor Deposition by pulsed DC sputtering system and the characterization of aluminum nitride thin films deposited using the assembled system. The different parts of the system are shown and ex- plained in detail. Deposition of aluminum nitride thin films with thicknesses in the range of 55 to 450nm was done at 500◦C over sapphire (c-cut), glass, silicon <1 1 1>, and silicon <1 0 0> substrates in the Physical Vapor Deposition system. X-ray diffraction and Atomic Force Microscopy were used for the characterization of the aluminum nitride films. Film orientation was found to be related to the deposition pressure. The lowest grain size obtained was 40nm.