Bernal-Corrales, Carlos J.

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Automated quantification of reverse recovery parameters for fast LDMOS devices
(2016-07) Bernal-Corrales, Carlos J.; Jiménez-Cedeño, Manuel; College of Engineering; Ducoudray, Gladys O.; Palomera, Rogelio; Department of Electrical and Computer Engineering; Alers, Hilton
The technological community is focused in increasing the operating frequency of power devices. There have been numerous efforts to develop transistors which are able to handle significant amounts of current at high-speeds. It is necessary to establish procedures in order to characterize the behavior of such devices. This thesis reports the development of an automated setup for performing tests on fast packaged and wafer-level LDMOS devices in order to extract their reverse recovery parameters. Automation is achieved using a Virtual Instruments Interface developed in LabViewTM. Several strategies were used to increase the operational frequency of the hardware setup enabling tests on devices up to 1.5MHz while adhering to the JEDEC standard for reverse parameters characterization. We addressed both, circuit functionality and PCB layout techniques. Moreover, the virtual instrument environment allows for handling the instrument setup, collecting the data, and extracting the parameters. The developed solution was implemented using low-cost testing equipment.