Instan-Ballesteros, Álvaro A.
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Publication Estudio comparativo de películas de aln crecidas por erosión iónica dc pulsada(2010) Instan-Ballesteros, Álvaro A.; Fernández, Félix E.; College of Arts and Science - Science; Marrero, Pablo J.; Ramos, Rafel A.; Department of Physics; Sharma, Anand D.The purpose of this work focused on evaluating the structure and composition of AlN thin films deposited on Si (100), Si (111), sapphire and glass substrates. For this purpose, AlN thin films were deposited by the technique of pulsed dc sputtering, with powers in the range of 60-100 W, with 1 microsecond, 2 and 3 microseconds reverse time and times of deposition in the range of 35 to 180 minutes. Characterization and comparison of the materials obtained was carried out through various techniques. Their structure was analyzed by x-ray diffraction (XRD) using CuK radiation, and it was found that films grown on glass at 90 W power and with 20 hours under vacuum previous to deposition showed better crystallization and preferential orientation than film grown at other conditions. Surface characterization by x-ray photoelectron spectroscopy (XPS) showed that the samples are easily contaminated with oxygen and other components that are harmful for crystallization of the desired material and for preferential orientation. Oxygen concentrations were found between 25 and 40 atomic % for some samples, which hinders adequate growth. With energy dispersive spectroscopy (EDS) measurements reduction was found in the amount of oxygen present for samples grown at 80, 90 and 100 W with prior vacuum time of 20 hours. Thickness measurements were made for the series of samples grown, and values between 70 and 1150 nm were obtained. The samples showed a nonlinear increase in thickness with sputtering power during growth.