Publication:
Rare earth ( Π = Ce, Er, Pr) substituted Bi (4-X) Π X Ti3O12 thin films: synthesis, structural and ferroelectric properties

dc.contributor.advisor Castellano-Rodríguez, Dorial
dc.contributor.author Dussan-Devia, Sandra L.
dc.contributor.college College of Arts and Science - Science en_US
dc.contributor.committee Perales-Pérez, Oscar
dc.contributor.committee Jiménez, Héctor
dc.contributor.department Department of Physics en_US
dc.contributor.representative Suárez, O. Marcelo
dc.date.accessioned 2019-04-15T17:19:23Z
dc.date.available 2019-04-15T17:19:23Z
dc.date.issued 2005
dc.description.abstract In the present research, rare earths (Π= Ce, Er, Pr)-substituted bismuth titanate Bi(4-x) ΠxTi3O12 thin films were synthesized by a chemical solution deposition (Sol-Gel) technique. Films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrates followed by their annealing at 750°C in air. The XRD patterns showed polycrystalline materials with preferential (117) orientation and a grain size between 20-40 nm estimated by the Debye-Scherrer equation. The AFM images of 1μm2 areas showed fairly uniform grains with smooth surface (root-mean-square roughness Rms < 13 nm) morphology. For x < 0.75, the Bi(4-x) Π x Ti3O12 films capacitors with a Pt top electrode exhibited good ferroelectric properties with the highest remnant polarization (PR = PS/2) values of 27.1μC/cm2, 22.2μC/cm2 and 50.3μC/cm2 for Π = Ce, Er, Pr, respectively and x = 0.55. The leakage current of 10-7A/cm2 was found to be lower than in the pure bismuth titanate (Bi4Ti3O12) films. en_US
dc.description.abstract Este trabajo presenta la síntesis de películas delgadas de titanato de bismuto “Bi(4-x) Π x Ti3O12” dopado con tierras raras “ Π = Ce, Er, Pr” usando el método se Sol- Gel, las películas fueron depositadas sobre substratos de Pt (Pt/TiO2/SiO2/Si) por ”spin coating” seguido de un tratamiento térmico a una temperatura de 750°C durante 1 hora. Los análisis de los patrones de rayos-x mostraron películas policristalinas con una preferencial orientación por el plano (117), el tamaño del grano fue entre 20-40 nm, calculado a partir de la ecuación de Debye-Scherrer. Las imágenes obtenidas por el microcopio de fuerza atómica indicaron películas homogéneas con una rugosidad promedio menor de 13 nm. Los capacitores formados con las películas exhibieron un alto valor de polarización remante para x=0.55 con valores de 27.1 μ C/cm2, 22.2 μ C/cm2 y 50.3 μ C/cm2 para Ce, Er, y Pr respectivamente, la medida de perdida de corriente fue menor que el valor obtenido del material sin dopar. en_US
dc.description.graduationYear 2005 en_US
dc.identifier.uri https://hdl.handle.net/20.500.11801/2084
dc.language.iso English en_US
dc.rights.holder (c) 2005 Sandra Liliana Dussan-Devia en_US
dc.rights.license All rights reserved en_US
dc.title Rare earth ( Π = Ce, Er, Pr) substituted Bi (4-X) Π X Ti3O12 thin films: synthesis, structural and ferroelectric properties en_US
dc.type Thesis en_US
dspace.entity.type Publication
thesis.degree.discipline Physics en_US
thesis.degree.level M.S. en_US
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