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Estudio de la transiciĆ³n de fase metal-semiconductor en diĆ³xido de vanadio
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Abstract
In this thesis we made a study about the Metal-Insulator phase transition with the
purpose to determine, particularly, the parameters to play a important rol in the
transition. For this we made a study of theories or models that exist currently about
materials with different grade of disorder, the importance of correlation between
electrons and the dimensionality of the system. Finally we choose for the treatment
of our data a model derived from the scaling theory.
We implemented a curve fit to experimental data of Electric Conductance G Vs
Temperature, in thin film of Vanadium Dioxide V O2, and we obtained a specific
functional form for carrier density Ī“n in function of temperature. Additionally we
define a rough criteria of critical region in terms of a interval of conductances that
include the critical conductance gc.
We proposed functional forms for curve fit of the conductance g in function of T to
regions out of critical region, they been valid for our experimental data. All this for
describe a full hysteresis cycle.
Finally we make a brief discussion about the values of found parameters on every
one of the region.
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Date
2015
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Keywords
TransiciĆ³n de fase metal-aislante en VO2, TeorĆa de Escala (Scaling Theory), Valor de la conductancia crĆtica gc, Ciclo de histĆ©resis