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dc.contributor.advisorJiménez-González, Héctor J.
dc.contributor.authorSánchez-Reyes, Pedro Juan
dc.date.accessioned2019-04-15T17:19:21Z
dc.date.available2019-04-15T17:19:21Z
dc.date.issued2009
dc.identifier.urihttps://hdl.handle.net/handle/20.500.11801/2059
dc.description.abstractV6O13 is one of the intermediate phase compounds between the vanadium-oxides VO2 and V2O5. In bulk, this material undergoes a structural transition at approximately 150K, and a magnetic transition from paramagnetic to antiferromagnetic at 55K. While optical experiments have shown that V6O13 is a metal at room temperature, and that a band gap appears at the structural transition temperature, electrical measurements in single crystals and polycrystalline samples have given contradictory results. In this experiment V6O13 thin films fabricated by the Pulsed Laser Deposition technique were studied. Resistivity measurements were made on the samples using the four-point-probe technique in the temperature interval from 30 to 280K. It was confirmed that V6O13 thin films undergoes a semiconductor- semiconductor transition near the reported structural transition temperature. It is also shown that the electrical behavior changed around the magnetic transition as well. A phenomenological model is proposed to model the physical behavior of the resistivity throughout the measured temperature range.en_US
dc.description.abstractV6O13 es uno de los compuestos de óxidos de vanadio entre VO2 y V2O5. Este material cambia su estructura cristalina alrededor de 150K, ademas sufre una transición magnética de paramagnético a antiferromagńetico cerca de 55K. Mientras experimentos ópticos han mostrado que V6O13 es un metal a temperatura ambiente, y que una brecha de energía aparece cerca de la temperatura de transición estructural, experimentos eléctricos en muestras de cristales sencillos y policristalinas han ofrecido resultados contradictorios. En este trabajo se estudiaron películas delgadas de V6O13 que fueron fabricadas usando el método de “Pulsed Laser Deposition”. Medidas de resistividad fueron hechas usando la técnica de los cuatro puntos en el rango de temperatura 30 − 280K. Se confirmo ́ que las películas delgadas de V6O13 sufren una transición de semiconductor a semiconductor cerca de la temperatura de transición estructural reportada. Ademas, se muestra que el comportamiento eléctrico de las películas delgadas también cambió cerca de la transición magnética. Un modelo fenomenológico es propuesto para modelar el comportamiento físico de la resistividad a través de todo el rango de temperatura medido.en_US
dc.language.isoEnglishen_US
dc.titleElectric studies of vanadium oxide (V6O13) thin filmsen_US
dc.rights.licenseAll rights reserveden_US
dc.rights.holder(c) 2009 Pedro Juan Sánchez-Reyesen_US
dc.contributor.committeeFernández, Félix E.
dc.contributor.committeeKim, Yong-Jihm
dc.contributor.representativeVélez-Reyes, Miguel
thesis.degree.levelM.S.en_US
thesis.degree.disciplinePhysicsen_US
dc.type.thesisThesisen_US
dc.contributor.collegeCollege of Arts and Science - Scienceen_US
dc.contributor.departmentDepartment of Physicsen_US
dc.description.graduationSemesterSummer (3rd semester)en_US
dc.description.graduationYear2009en_US


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    Items included under this collection are theses, dissertations, and project reports submitted as a requirement for completing a degree at UPR-Mayagüez.

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