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dc.contributor.advisorFernández, Félix E.
dc.contributor.authorMendoza-Centeno, Frank Willi
dc.date.accessioned2019-04-15T17:19:23Z
dc.date.available2019-04-15T17:19:23Z
dc.date.issued2006
dc.identifier.urihttps://hdl.handle.net/handle/20.500.11801/2076
dc.description.abstractA set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measure-ments were performed on silicon wafers and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by Pulsed Laser Deposition on sapphire substrate, and lower for films grown on MgO and glass substrates. For the sample grown on sapphire other transport properties, obtained through Hall effect measurements, were determined.en_US
dc.description.abstractSe configuró un conjunto de instrumentación electrónica para realizar mediciones de resistividad y coeficiente de Hall basados en la técnica de medición de cuatro puntas de van der Pauw. Se realizaron mediciones en sustratos de silicio y películas delgadas de dióxido de vanadio. Se corroboró el abrupto cambio de resistividad en la temperatura crítica de transición de semiconductor a metal, por hasta cinco ordenes de magnitud, en películas delgadas de VO2 crecidas sobre sustratos de zafiro mediante Deposición por Laser Pulsado, y menores para películas crecidas sobre sustratos de MgO y vidrio. Para la muestra sobre zafiro se determinaron otras propiedades de transporte obtenidas a partir del efecto Hall.en_US
dc.language.isoEspañolen_US
dc.titleMedicine de propiedades eléctricas en películas delgadas de dióxido de vanadioen_US
dc.typeThesisen_US
dc.rights.licenseAll rights reserveden_US
dc.rights.holder(c) 2006 Frank Willi Mendoza-Centenoen_US
dc.contributor.committeeJiménez González, Héctor
dc.contributor.committeeVelázquez Esóv S..
dc.contributor.representativeSánchez, Halley D.
thesis.degree.levelM.S.en_US
thesis.degree.disciplinePhysicsen_US
dc.contributor.collegeCollege of Arts and Science - Scienceen_US
dc.contributor.departmentDepartment of Physicsen_US
dc.description.graduationSemesterSpring (2nd semester)en_US
dc.description.graduationYear2006en_US


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