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dc.contributor.advisorCastellano-Rodríguez, Dorial
dc.contributor.authorDussan-Devia, Sandra L.
dc.date.accessioned2019-04-15T17:19:23Z
dc.date.available2019-04-15T17:19:23Z
dc.date.issued2005
dc.identifier.urihttps://hdl.handle.net/handle/20.500.11801/2084
dc.description.abstractIn the present research, rare earths (Π= Ce, Er, Pr)-substituted bismuth titanate Bi(4-x) ΠxTi3O12 thin films were synthesized by a chemical solution deposition (Sol-Gel) technique. Films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrates followed by their annealing at 750°C in air. The XRD patterns showed polycrystalline materials with preferential (117) orientation and a grain size between 20-40 nm estimated by the Debye-Scherrer equation. The AFM images of 1μm2 areas showed fairly uniform grains with smooth surface (root-mean-square roughness Rms < 13 nm) morphology. For x < 0.75, the Bi(4-x) Π x Ti3O12 films capacitors with a Pt top electrode exhibited good ferroelectric properties with the highest remnant polarization (PR = PS/2) values of 27.1μC/cm2, 22.2μC/cm2 and 50.3μC/cm2 for Π = Ce, Er, Pr, respectively and x = 0.55. The leakage current of 10-7A/cm2 was found to be lower than in the pure bismuth titanate (Bi4Ti3O12) films.en_US
dc.description.abstractEste trabajo presenta la síntesis de películas delgadas de titanato de bismuto “Bi(4-x) Π x Ti3O12” dopado con tierras raras “ Π = Ce, Er, Pr” usando el método se Sol- Gel, las películas fueron depositadas sobre substratos de Pt (Pt/TiO2/SiO2/Si) por ”spin coating” seguido de un tratamiento térmico a una temperatura de 750°C durante 1 hora. Los análisis de los patrones de rayos-x mostraron películas policristalinas con una preferencial orientación por el plano (117), el tamaño del grano fue entre 20-40 nm, calculado a partir de la ecuación de Debye-Scherrer. Las imágenes obtenidas por el microcopio de fuerza atómica indicaron películas homogéneas con una rugosidad promedio menor de 13 nm. Los capacitores formados con las películas exhibieron un alto valor de polarización remante para x=0.55 con valores de 27.1 μ C/cm2, 22.2 μ C/cm2 y 50.3 μ C/cm2 para Ce, Er, y Pr respectivamente, la medida de perdida de corriente fue menor que el valor obtenido del material sin dopar.en_US
dc.language.isoEnglishen_US
dc.titleRare earth ( Π = Ce, Er, Pr) substituted Bi (4-X) Π X Ti3O12 thin films: synthesis, structural and ferroelectric propertiesen_US
dc.typeThesisen_US
dc.rights.licenseAll rights reserveden_US
dc.rights.holder(c) 2005 Sandra Liliana Dussan-Deviaen_US
dc.contributor.committeePerales-Pérez, Oscar
dc.contributor.committeeJiménez, Héctor
dc.contributor.representativeSuárez, Marcelo
thesis.degree.levelM.S.en_US
thesis.degree.disciplinePhysicsen_US
dc.contributor.collegeCollege of Arts and Science - Scienceen_US
dc.contributor.departmentDepartment of Physicsen_US
dc.description.graduationYear2005en_US


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