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dc.contributor.advisorJiménez-Cedeño, Manuel
dc.contributor.authorBula-Racines, Carlos D.
dc.date.accessioned2019-05-15T17:59:27Z
dc.date.available2019-05-15T17:59:27Z
dc.date.issued2010
dc.identifier.urihttps://hdl.handle.net/20.500.11801/2309
dc.description.abstractThis thesis presents a study of the impact of considering correlation among noise sources when performing behavioral modeling of Sigma Delta modulators (SDM). As part of this work a procedure for derivation of input refereed noise for switched capacitor integrator including correlations among sources was outlined. A behavioral model of a 2nd order, 5-level SDM including noise sources correlation was developed in Verilog-A. In order to validate the model, it was required to know circuital and process parameters. To fulfil this requirement, a transistor level design of the mod- ulator was developed. The results of simulations produced by the behavioral model including correlations were compared against those of the transistor-level and against a previous behavioral model that does not include correlations. The results showed that considering correlations among noise sources in a behavioral model produced a more accurate approximation when compared to the transistor level results.en_US
dc.description.abstractEn esta tesis, se presenta un estudio del impacto que conlleva considerar las correlaciones entre las fuentes de ruido en un modulador sigma delta cuando se realiza modelado comportamental. Como parte de este trabajo, un procedimiento para la derivación de una expresión del ruido referido a la entrada en un integrador de capacitor conmutado es presentado. Con base en dicha expresión, el modelo de un modulador sigma delta de segundo orden y cinco niveles fué desarrollado en Verilog-A. Con el fin tener parámetros circuitales y de proceso conocidos, se desarrolló un modelo a nivel de transistores del modulador. Los resultados de las simulaciones producidas por el modelo comportamental que incluye correlaciones fueron comparados con los resultados producidos por el modelo nivel de transistores y con un modelo previo que no incluia correlaciones entre las fuentes de ruido. Los resultados mostraron que considerar las correlaciones entre dichas fuentes en el lo comportamental producía una aproximación mas cercana a los resultados mode producidos por la simulación a nivel de transistores.en_US
dc.language.isoEnglishen_US
dc.titleStudy of correlations among noise sources in sigma delta modulatorsen_US
dc.typeThesisen_US
dc.rights.licenseAll rights reserveden_US
dc.rights.holder(c) 2010 Carlos David Bula-Racinesen_US
dc.contributor.committeeDucoudray, Gladys O.
dc.contributor.committeePalomera-García, Rogelio
dc.contributor.representativeCáceres, Luis F.
thesis.degree.levelM.S.en_US
thesis.degree.disciplineElectrical Engineeringen_US
dc.contributor.collegeCollege of Engineeringen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.description.graduationSemesterFall (1st Semester)en_US
dc.description.graduationYear2010en_US


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  • Theses & Dissertations
    Items included under this collection are theses, dissertations, and project reports submitted as a requirement for completing a degree at UPR-Mayagüez.

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