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dc.contributor.advisorSepulveda-Alancastro, Nelson
dc.contributor.authorAponte-Roa, Diego A.
dc.date.accessioned2019-05-15T17:59:31Z
dc.date.available2019-05-15T17:59:31Z
dc.date.issued2008
dc.identifier.urihttps://hdl.handle.net/20.500.11801/2347
dc.description.abstractThis work presents the setup of a Physical Vapor Deposition by pulsed DC sputtering system and the characterization of aluminum nitride thin films deposited using the assembled system. The different parts of the system are shown and ex- plained in detail. Deposition of aluminum nitride thin films with thicknesses in the range of 55 to 450nm was done at 500◦C over sapphire (c-cut), glass, silicon <1 1 1>, and silicon <1 0 0> substrates in the Physical Vapor Deposition system. X-ray diffraction and Atomic Force Microscopy were used for the characterization of the aluminum nitride films. Film orientation was found to be related to the deposition pressure. The lowest grain size obtained was 40nm.en_US
dc.description.abstractEste trabajo presenta el ensamblaje de un sistema de deposición física de vapor de pulverización catódica por DC pulsado y la caracterización de películas delgadas de nitruro de aluminio depositadas usando dicho sistema. Todas las partes del sistema son mostradas y explicadas en detalle. Se depositaron películas delgadas de nitruro de aluminio con un grosor desde 55 hasta 450nm a 500 ◦C sobre sustratos de zafiro (corte-c), vidrio, silicio <1 1 1> y silicio <1 0 0> en el sistema de deposición física de vapor. Difracción de rayos X y el Microscopio de Fuerza Atómica fueron usados para caracterizar las películas de nitruro de aluminio. Una relación entre la presión de deposición y la orientación de la pel ́ıcula fue encontrada. El tamaño del grano más pequeño obtenido fue 40nm.en_US
dc.description.sponsorshipSupported by the NSF-PR-EPSCoR Start-Up funds.en_US
dc.language.isoEnglishen_US
dc.titleCharacterization of aluminum nitride thin films for micro and nanomechanical resonatorsen_US
dc.typeThesisen_US
dc.rights.licenseAll rights reserveden_US
dc.rights.holder(c) 2008 Diego Andrés Aponte-Roaen_US
dc.contributor.committeeFernández, Félix E.
dc.contributor.committeeRodríguez-Solís, Rafael A.
dc.contributor.representativePadovani, Agnes M.
thesis.degree.levelM.E.en_US
thesis.degree.disciplineElectrical Engineeringen_US
dc.contributor.collegeCollege of Engineeringen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.description.graduationYear2008en_US


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