Publication:
Crecimiento y caracterizacion de peliculas delgadas de V<sub>6</sub>O<sub>13</sub>

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Authors
Rojas-Morales, William
Embargoed Until
Advisor
Rúa-de la Asunción, Armando
College
College of Arts and Sciences - Sciences
Department
Department of Physics
Degree Level
M.S.
Publisher
Date
2021-12-09
Abstract
In the research here discussed, V<sub>6</sub>O<sub>13</sub> thin films were deposited on silicon glass substrates (SiO2) by DC magnetron sputtering. The V<sub>6</sub>O<sub>13 </sub>thin films were obtained by thermally treating V<sub>2</sub>O<sub>5</sub> thin films grown by the spin coating technique. The structural properties of the thin films were analyzed by X-ray diffraction. The characteristic planes corresponding to the orthorhombic structure of V<sub>2</sub>O<sub>5</sub> were observed, as well as the monoclinic structure of V<sub>6</sub>O<sub>13</sub> with a preferential orientation along the (001) direction. The thin films were electrically characterized with the van der Pauw technique, measuring the resistivity as a function of temperature in the 80K to 300K range. The semiconductor to metal transition at 150K that has been reported for this material&rsquo;s powder was not observed, which coincides with published results for thin films of the material. These differences could be attributed to stoichiometrical variations of the material. In an attempt to solve this problem, the material was treated in its equilibrium conditions. After a thermal treatment was performed to the V<sub>6</sub>O<sub>13</sub> samples, it was observed that the diffraction planes are similar to those seen for the material in bulk. The morphology of the thin films was examined by atomic force microscopy (AFM). The V<sub>6</sub>O<sub>13</sub> thin films showed rough surfaces and different grain sizes, before and after the thermal treatment. However, the resistivity measurements did not reveal the metal-insulator transition of the material in powder form.

En este trabajo de investigaci&oacute;n se depositaron pel&iacute;culas delgadas de V6O13 sobre sustratos de vidrio (SiO<sub>2</sub>) por la t&eacute;cnica de sputtering magnetr&oacute;n DC. Adem&aacute;s, se logr&oacute; obtener pel&iacute;culas V<sub>6</sub>O<sub>13</sub> por medio un tratamiento t&eacute;rmico realizado a pel&iacute;culas delgadas de V<sub>2</sub>O<sub>5</sub> que fueron crecidas por la t&eacute;cnica de sol gel spin coating. Las propiedades estructurales de las pel&iacute;culas delgadas se estudiaron por la t&eacute;cnica de difracci&oacute;n de rayos X. Se observaron planos caracter&iacute;sticos de la estructura ortorr&oacute;mbica del V<sub>2</sub>O<sub>5</sub>; al igual que se identific&oacute; la estructura monocl&iacute;nica correspondiente al V<sub>6</sub>O<sub>13</sub> con una orientaci&oacute;n preferencial en la direcci&oacute;n (001). La caracterizaci&oacute;n el&eacute;ctrica de las pel&iacute;culas de V<sub>6</sub>O<sub>13</sub> se realiz&oacute; con la t&eacute;cnica de van der Pauw midiendo la resistividad en funci&oacute;n de la temperatura en el rango de 80K a 300K. No se observ&oacute; en los resultados la transici&oacute;n de semiconductor a metal a la temperatura de 150K reportada para el material en polvo lo que concuerda con los resultados publicados para pel&iacute;culas de este material. Estas diferencias en los resultados pueden ser adjudicados a variaciones en la estequiometria del material. En un intento por resolver este problema se realiz&oacute; un tratamiento t&eacute;rmico en las condiciones de equilibrio del material. Despu&eacute;s del tratamiento t&eacute;rmico realizado a las muestras de V<sub>6</sub>O<sub>13</sub> se observ&oacute; que los planos de difracci&oacute;n son similares a los mostrados por el material en grueso. La morfolog&iacute;a de las pel&iacute;culas se estudi&oacute; por medio de microscop&iacute;a de fuerza at&oacute;mica (AFM). Las pel&iacute;culas de V<sub>6</sub>O<sub>13</sub> presentaron superficies con rugosidad y tama&ntilde;o de granos diferentes, antes y despu&eacute;s del tratamiento t&eacute;rmico. Sin embargo, las medidas de resistividad no revelaron la transici&oacute;n metal-aislante que presenta el material en polvo.
Keywords
Oxido de vanadio V6O13
Usage Rights
All Rights Reserved / restricted to Campus
Cite
Rojas-Morales, W. (2021). Crecimiento y caracterizacion de peliculas delgadas de V6O13 [Thesis]. Retrieved from https://hdl.handle.net/20.500.11801/2851