Dussan-Devia, Sandra L.

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Rare earth ( Π = Ce, Er, Pr) substituted Bi (4-X) Π X Ti3O12 thin films: synthesis, structural and ferroelectric properties
(2005) Dussan-Devia, Sandra L.; Castellano-Rodríguez, Dorial; College of Arts and Science - Science; Perales-Pérez, Oscar; Jiménez, Héctor; Department of Physics; Suárez, O. Marcelo
In the present research, rare earths (Π= Ce, Er, Pr)-substituted bismuth titanate Bi(4-x) ΠxTi3O12 thin films were synthesized by a chemical solution deposition (Sol-Gel) technique. Films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrates followed by their annealing at 750°C in air. The XRD patterns showed polycrystalline materials with preferential (117) orientation and a grain size between 20-40 nm estimated by the Debye-Scherrer equation. The AFM images of 1μm2 areas showed fairly uniform grains with smooth surface (root-mean-square roughness Rms < 13 nm) morphology. For x < 0.75, the Bi(4-x) Π x Ti3O12 films capacitors with a Pt top electrode exhibited good ferroelectric properties with the highest remnant polarization (PR = PS/2) values of 27.1μC/cm2, 22.2μC/cm2 and 50.3μC/cm2 for Π = Ce, Er, Pr, respectively and x = 0.55. The leakage current of 10-7A/cm2 was found to be lower than in the pure bismuth titanate (Bi4Ti3O12) films.