Rojas-Morales, William

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    Crecimiento y caracterizacion de peliculas delgadas de V6O13
    (2021-12-09) Rojas-Morales, William; Rúa-de la Asunción, Armando; College of Arts and Sciences - Sciences; Sánchez, Dilsom; Marrero, Pablo J.; Department of Physics; Irizarry-Hernández, Zollianne
    In the research here discussed, V6O13 thin films were deposited on silicon glass substrates (SiO2) by DC magnetron sputtering. The V6O13 thin films were obtained by thermally treating V2O5 thin films grown by the spin coating technique. The structural properties of the thin films were analyzed by X-ray diffraction. The characteristic planes corresponding to the orthorhombic structure of V2O5 were observed, as well as the monoclinic structure of V6O13 with a preferential orientation along the (001) direction. The thin films were electrically characterized with the van der Pauw technique, measuring the resistivity as a function of temperature in the 80K to 300K range. The semiconductor to metal transition at 150K that has been reported for this material’s powder was not observed, which coincides with published results for thin films of the material. These differences could be attributed to stoichiometrical variations of the material. In an attempt to solve this problem, the material was treated in its equilibrium conditions. After a thermal treatment was performed to the V6O13 samples, it was observed that the diffraction planes are similar to those seen for the material in bulk. The morphology of the thin films was examined by atomic force microscopy (AFM). The V6O13 thin films showed rough surfaces and different grain sizes, before and after the thermal treatment. However, the resistivity measurements did not reveal the metal-insulator transition of the material in powder form.